Suspending Effect on Low-Frequency Charge Noise in Graphene Quantum Dot

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Suspending Effect on Low-Frequency Charge Noise in Graphene Quantum Dot

Charge noise is critical in the performance of gate-controlled quantum dots (QDs). Such information is not yet available for QDs made out of the new material graphene, where both substrate and edge states are known to have important effects. Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET), increa...

متن کامل

Low Power and Low Latency Phase-‎Frequency Detector in Quantum-Dot ‎Cellular Automata Nanotechnology

   Nowadays, one of the most important blocks in telecommunication circuits is the frequency synthesizer and the frequency multipliers. Phase-frequency detectors are the inseparable parts of these circuits. In this paper, it has been attempted to design two new structures for phase-frequency detectors in QCA nanotechnology. The proposed structures have the capability of detecting the phase ...

متن کامل

pH Effect on the Size of Graphene Quantum dot Synthesized by Using Pulse Laser Irradiation

In this study graphene oxide (GO) was synthesized by using Hummer’s method. Low dimension graphene quantum dot nanoparticles (GQDs) were synthesized using pulse laser irradiation. Fourier Transform-Infrared Spectroscopy (FTIR), Ultraviolet-Visible (UV-Vis) spectroscopy and photoluminescence (PL) analysis were applied to study the GQDs characteristic. Scanning electron microscopy illustrated the...

متن کامل

Dynamic Charge Carrier Trapping in Quantum Dot Field Effect Transistors.

Noncrystalline semiconductor materials often exhibit hysteresis in charge transport measurements whose mechanism is largely unknown. Here we study the dynamics of charge injection and transport in PbS quantum dot (QD) monolayers in a field effect transistor (FET). Using Kelvin probe force microscopy, we measured the temporal response of the QDs as the channel material in a FET following step fu...

متن کامل

Low-frequency 1/f noise in graphene devices.

Low-frequency noise with a spectral density that depends inversely on frequency has been observed in a wide variety of systems including current fluctuations in resistors, intensity fluctuations in music and signals in human cognition. In electronics, the phenomenon, which is known as 1/f noise, flicker noise or excess noise, hampers the operation of numerous devices and circuits, and can be a ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Scientific Reports

سال: 2015

ISSN: 2045-2322

DOI: 10.1038/srep08142